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FQD17P06 Datasheet, Fairchild Semiconductor

FQD17P06 mosfet equivalent, 60v p-channel mosfet.

FQD17P06 Avg. rating / M : 1.0 rating-16

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FQD17P06 Datasheet

Features and benefits


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* -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tes.

Application

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FQD17P06 Page 1 FQD17P06 Page 2 FQD17P06 Page 3

TAGS

FQD17P06
60V
P-Channel
MOSFET
FQD17N08
FQD17N08L
FQD10N20
Fairchild Semiconductor

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